Low-Temperature Preparation of Pb(Zr,Ti)O_3 Thin Filmson (Pb,La)TiO_3 Buffer Layer by Multi-Jon-Beam Sputtering

Ferroelectric lead-zirconate-titanate (PZT) thin films were successfully fabricated by the multi-ion-beam sputtering technique in an oxygen ambient at a low substrate temperature of 415℃. By inserting lead-lanthanum-titanate (PLT) buffer layers between substrates and PZT films, the perovskite-PZT thin films could be epitaxially grown on (100)MgO, (100)Pt/MgO and (111)Pt/Ti/SiO_2/Si substrates, These films, even at thickness values of as low as 630 Å, showed excellent ferroelectric properties with a remanent polarization of 20 μC/cm^2, coercive field of 200 kV/cm, and a relative dielectric constant of 700.