KrF Excimer Laser Process: Lateral and Surface Modification for Enhancing Resist Contrast

• Minamiyama Takayuki

  ULSI Research Center, Toshiba Corporation

• Kumagae Akitoshi

  ULSI Research Center, Toshiba Corporation

• Sato Kazuo

  ULSI Research Center, Toshiba Corporation

• Ito Shin-ichi

  ULSI Research Center, Toshiba Corporation

• Nakase Makoto

  ULSI Research Center, Toshiba Corporation

抄録

A KrF excimer laser process, “lateral and surface modification for enhancing resist contrast” (LASER), combining alkali treatment before exposure and step development was investigated to improve the resolution capability of a novolac-diazoquinone-type positive tone photoresist. It has been found that a thin insoluble layer formed on both the resist surface and side wall maintains the resist thickness and the resist profile during development. As a result, a 0.35-μm line-and-space pattern with a steep profile can be obtained. The insoluble layer formation is due to the concentration of a photoactive compound, which is caused by the water rinse processes after the alkali treatment and the first step development.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 31 (6), 1928-1932, 1992

  社団法人応用物理学会

キーワード

• KrF excimer laser
• resist process
• alkali treatment
• step development
• resolution capability
• resist profile

詳細情報

• CRID: 1573950402131040256
• NII論文ID: 110003900810
• NII書誌ID: AA10457675
• 本文言語コード: en
• データソース種別:
  • CiNii Articles