Initial Stage of the Interfacial Reaction between Nickel and Hydrogenated Amorphous Silicon

• Kawazu Yunosuke

  Institute of Applied Physics, University of Tsukuba

• Kudo Hiroshi

  Institute of Applied Physics, University of Tsukuba

• Onari Seinosuke

  Institute of Applied Physics, University of Tsukuba

• Arai Toshihiro

  Institute of Applied Physics, University of Tsukuba

抄録

The initial stage of the interfacial reaction between Ni and hydrogenated amorphous silicon has been studied mainly by in situ electrical resistance measurement. The change of the resistance in this system induced by the annealing at a constant heating rate shows a sudden drop, which corresponds to the amorphous-to-crystalline transformation of the Ni–Si intermixing layer. In situ resistance measurements for various intermixing layers in the initial stage demonstrate that the crystallization temperature becomes lower with the increase of the amount of Ni contained in the layer. The result means that the thermal stability of the intermixing layer decreases with its growth. It is suggested that the crystallization occurs when the amount of Ni contained in the intermixing layer reaches the critical thickness, which depends on the temperature.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 29 (4), 729-738, 1990

  社団法人応用物理学会

キーワード

• initial stage
• interfacial reaction
• nickel silicide
• hydrogenated amorphous silicon
• in situ resistance measurement
• amorphous-to-crystalline transformation
• critical thickness
• elastic recoil detection technique

詳細情報

• CRID: 1571417127340381952
• NII論文ID: 110003901847
• NII書誌ID: AA10457675
• 本文言語コード: en
• データソース種別:
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