Study on Chemical Reactions on the Growing Surface to Control the Structures of μc-Silicon from Fluorinated Precursors

• Nakata Masami

  The Graduate School at Nagatsuta, Tokyo Institute of Technology

• Sakai Akira

  The Graduate School at Nagatsuta, Tokyo Institute of Technology

• Shirai Hajime

  The Graduate School at Nagatsuta, Tokyo Institute of Technology

• Hanna Junichi

  The Graduate School at Nagatsuta, Tokyo Institute of Technology

• Shimizu Isamu

  The Graduate School at Nagatsuta, Tokyo Institute of Technology

抄録

We investigated the roles of atomic hydrogen in the crystal growth process from fluorinated precursors of SiH_nF_m under the two conditions that are dominated by the surface reaction on the substrate and by the gas phase reaction. Differences in structural morphology of microcrystal were observed by TEM (Transmission Electron Microscopy) measurement, and the dependence of crystal structure and orientation on growth thickness were compared. Furthermore, a slight amount of guest molecules modified the crystal structure effectively and improved the elliptic-shaped crystals in the case of PH₃ doping gas without any post treatment. The shape of the elliptical crystal, especially the length of the longer axis of the crystal, was clearly changed according to the experimental conditions. This behavior appears as the key factor in elucidating the role of doping constituents of P.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 30 (10), 2562-2568, 1991

  社団法人応用物理学会

キーワード

• fluorinated precursors
• atomic hydrogen
• structural change
• PH<SUB>3</SUB> doping
• enhancement of the crystallization
• elliptic-shaped crystal
• TEM observation

詳細情報

• CRID: 1571698602317641344
• NII論文ID: 110003902022
• NII書誌ID: AA10457675
• 本文言語コード: en
• データソース種別:
  • CiNii Articles