Field-Induction-Drain Thin-Film Transistors for Liquid-Crystal Display Applications

• Tanaka Keiji

  NTT Interdisciplinary Research Laboratories

• Suyama Shiro

  NTT Affiliated Business Development Headquarters

• Kato Kinya

  NTT Interdisciplinary Research Laboratories

抄録

A field-induction-drain (FID) poly-Si thin-film transistor (TFT), in which an electrically induced layer is used as a drain, is proposed. This TFT achieves a low OFF current and a high ON/OFF current ratio by simply incorporating an additional gate electrode. Moreover, the structure can be modified to make it suitable for complementary MOS (CMOS) applications. In this unified-structure FID (UFID) TFT, n-channel operation and p-channel operation are interchangeable. This paper presents this electrically induced layer which works well as a TFT drain and has beneficial influence on TFT characteristics.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 30 (11), 3302-3307, 1991

  社団法人応用物理学会

キーワード

• poly-silicon
• TFT
• leakage current
• CMOS
• LCD

詳細情報

• CRID: 1571698602317408896
• NII論文ID: 110003902161
• NII書誌ID: AA10457675
• 本文言語コード: en
• データソース種別:
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