Control of GaAs and InGaAs Insulator-Semiconductor and Metal-Semiconductor Interfaces by Ultrathin Molecular Beam Epitaxy Si Layers

• Akazawa Masamichi

  Department of Electrical Engineering and Research Center for Interface Quantum Electronics, Hokkaido University

• Ishii Hirotatsu

  Department of Electrical Engineering and Research Center for Interface Quantum Electronics, Hokkaido University

• Hasegawa Hideki

  Department of Electrical Engineering and Research Center for Interface Quantum Electronics, Hokkaido University

Abstract

Removal or control of Fermi level pinning is attempted using an ultrathin molecular beam epitaxy (MBE) Si interface control layer (Si ICL) for insulator-semiconductor (I-S) and metal-semiconductor (M-S) interfaces of GaAs and InGaAs. For successful removal of Fermi level pinning at the I-S interface, the Si ICL should maintain an ordered pseudomorphic structure. The optimum thickness of the Si ICL is about 10 Å. Formation of such a Si ICL alone does not remove pinning; subsequent deposition of a SiO₂ film is necessary for unpinning. Pinning at the air-exposed surfaces can be removed by combining an HF surface treatment with the Si ICL technique. The Si ICL technique is promising for controlling barrier heights at M-S interfaces.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 30 (12), 3744-3749, 1991

  The Japan Society of Applied Physics

Keywords

• DIGS model
• surface
• interface
• MIS
• Schottky barrier height
• interface states
• interface control layer
• GaAs
• InGaAs
• XPS
• RHEED
• <I>C</I>-<I>V</I>
• <I>I</I>-<I>V</I>
• MBE

Details

• CRID: 1572543027247842432
• NII Article ID: 110003902249
• NII Book ID: AA10457675
• Text Lang: en
• Data Source:
  • CiNii Articles