Effects of Some Additives on Thermoelectric Properties of FeSi<SUB>2</SUB> Thin Films

• Komabayashi Masashi

  Central Research Institute, Mitsubishi Materials Corporation

• Hijikata Ken-ichi

  Central Research Institute, Mitsubishi Materials Corporation

• Ido Shunji

  Department of Electrical Engineering, Faculty of Engineering, Saitama University

抄録

Effects of some additives (V, Cr, Mn, Co, Ni, Pd, Pt) on thermoelectric properties of FeSi₂ thin films were studied. V, Cr or Mn-doped FeSi₂ films were of p-type semiconductor and Co, Ni, Pd and Pt-doped FeSi₂ films of n-type semiconductor. It was indicated that V or Cr are more suitable additives in thermoelectric properties of p-type FeSi₂ than Mn and that Pt is superior to other additives in thermoelectric properties of n-type FeSi₂.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 30 (2), 331-334, 1991

  社団法人応用物理学会

キーワード

• FeSi<SUB>2</SUB> thin film
• thermoelectric property
• RF-sputtering
• effects of additives
• activation energy

詳細情報

• CRID: 1573950402130044928
• NII論文ID: 110003902317
• NII書誌ID: AA10457675
• 本文言語コード: en
• データソース種別:
  • CiNii Articles