Reactive Planar Magnetron Sputtering System with Obliquely Facing Targets of Zn
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- Tominaga Kikuo
- The University of Tokushima, Faculty of Engineering
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- Shirai Masaki
- The University of Tokushima, Faculty of Engineering
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- Imai Hiroshi
- The University of Tokushima, Faculty of Engineering
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抄録
Planar magnetron sputtering system with obliquely facing targets was constructed to prepare ZnO films, and the possibility of the application of this sputtering system to the practical preparation of ZnO was studied. The films were prepared by the sputtering of Zn in O2 (100%) and the target-substrate configuration was arranged to avoid film bombardment by energetic oxygen particles. Gas pressure dependence of the c-axis orientation of the film was estimated. The presented sputtering system provided more highly c-axis-oriented polycrystalline films of ZnO than ordinary planar magnetron sputtering.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 30 (9), 2216-2219, 1991
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詳細情報 詳細情報について
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- CRID
- 1574231877108274816
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- NII論文ID
- 110003902710
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- NII書誌ID
- AA10457675
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- 本文言語コード
- en
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- データソース種別
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- CiNii Articles