Characterization of Pb(Zr, Ti)O_3 Thin Films Prepared by Multi-Ion-Beam Sputtering

Lead-zirconate-titanate (PZT) thin films with lead-lanthanum-titanate (PLT) buffer layer prepared by multi-ion-beam sputtering were characterized from the structural and electrical viewpoints. Cross-sectional transmission electron microscopy (TEM) observation demonstrated the epitaxial growth of the films without intermixing layers or misfit dislocations. Nominal interdiffusion of PZT/PLT/substrates was found in the depth profiles obtained from secondary ion mass spectroscopy (SIMS). The PZT films over the entire compositional range of Zr/Ti ratio exhibited relative dielectric constant which was consistent with the dependence of bulk PZT; however, obvious changes of lattice spacings at phase boundaries were not found from X-ray diffraction (XRD) measurement.