Effect of Si Interlayers on Stress and Curvature Radius of GaAs/Si and GaAs/Si/GaAs/Si Heterostructures with Interfacial Misfit Dislocations.

• Nakajima Kazuo

  ULSI Crystals Laboratory, Fujitsu Laboratories Ltd., 10–1, Morinosato–Wakamiya, Atsugi 243–01

• Furuya Kimiko

  ULSI Crystals Laboratory, Fujitsu Laboratories Ltd., 10–1, Morinosato–Wakamiya, Atsugi 243–01

抄録

A theoretical model is proposed to calculate the stress distribution in multilayer heterostructures perturbed by introduction of interfacial misfit dislocations and thermal stress. In this model, the stress relaxation effect caused by interfacial misfit dislocations is considered to spread all over the layers above the heterointerface. Using this model, the stress and curvature radius at 25^° C are calculated for the GaAs/Si and GaAs/Si/GaAs/Si heterostructures with interfacial misfit dislocations. The stress shared in the GaAs layer becomes smaller when Si interlayers are inserted into the GaAs layer of the GaAs/Si heterostructure. The curvature radius of the GaAs/Si/GaAs/Si (GaAs/Si with Si interlayers) heterostructure increases as the thickness of the Si interlayer increases. The GaAs/Si heterostructure becomes flat more easily upon insertion of Si interlayers into the GaAs layer.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 33 (3A), 1420-1426, 1994

  The Japan Society of Applied Physics

キーワード

• stress calculation
• misfit dislocations
• GaAs/Si
• Si interlayer
• strained heterostructure

詳細情報

• CRID: 1390001206244982912
• NII論文ID: 210000035131
• NII論文ID: 110003903045
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.33.1420
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.33.1420
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.33.1420/pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可