Preparation of (Ba, Sr)TiO₃ Thin Films by Chemical Vapor Deposition Using Liquid Sources

• Kawahara Takaaki

  Semiconductor Research Laboratory, Mitsubishi Electric Corporation, 8–1–1 Tsukaguchi Honmachi, Amagasaki, Hyogo 661

• Yamamuka Mikio

  Semiconductor Research Laboratory, Mitsubishi Electric Corporation, 8–1–1 Tsukaguchi Honmachi, Amagasaki, Hyogo 661

• Makita Tetsuro

  Semiconductor Research Laboratory, Mitsubishi Electric Corporation, 8–1–1 Tsukaguchi Honmachi, Amagasaki, Hyogo 661

• Tsutahara Koichiro

  Kita–Itami Works, Mitsubishi Electric Corporation, 4–1 Mizuhara, Itami, Hyogo 664

• Yuuki Akimasa

  Semiconductor Research Laboratory, Mitsubishi Electric Corporation, 8–1–1 Tsukaguchi Honmachi, Amagasaki, Hyogo 661

• Ono Kouichi

  Semiconductor Research Laboratory, Mitsubishi Electric Corporation, 8–1–1 Tsukaguchi Honmachi, Amagasaki, Hyogo 661

• Matsui Yasuji

  Semiconductor Research Laboratory, Mitsubishi Electric Corporation, 8–1–1 Tsukaguchi Honmachi, Amagasaki, Hyogo 661

書誌事項

タイトル別名

• Preparation of (Ba, Sr)TiO3 Thin Films by Chemical Vapor Deposition Using Liquid Sources

抄録

Thin films of (Ba, Sr)TiO₃ with high dielectric constant were prepared on Pt/SiO₂/Si substrates of 6-inch-diameter by chemical vapor deposition using liquid sources. Ba(DPM)₂ and Sr(DPM)₂ dissolved into tetrahydrofuran were vaporized in a vaporizer at 523 K, and Ti(O-i-C₃H₇)₄ was bubbled at 313 K. The mixture of the source vapors with O₂ and N₂O was supplied to the reactor (10 Torr) at uniform velocities through a shower-type nozzle, which realized uniform profiles in the deposited film thickness and composition. The electrical properties are significantly influenced by the film composition, and the typical properties obtained for a 800-Å-thick film prepared at the substrate temperature of 823 K are an equivalent SiO₂ thickness t _eq of 5.2 Å, a leakage current J _L of 2.4× 10^-6 A/cm² (at 1.65 V), and a dielectric loss tan δ of 0.07.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 33 (10A), 5897-5902, 1994

  The Japan Society of Applied Physics

キーワード

• LSI
• CVD
• capacitor
• BST
• DPM
• dielectric constant
• leakage current
• dielectric loss
• step coverage

詳細情報

• CRID: 1390282681248507904
• NII論文ID: 110003903468
• NII論文ID: 210000036115
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.33.5897
• COI: 1:CAS:528:DyaK2MXhslSlt7g%3D
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.33.5897
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.33.5897/pdf
• 本文言語コード: en
• データソース種別:
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