Direct Measurement of Surface Charging during Plasma Etching (<Special Issue> Plasma Processing)

• MURAKAWA Shigemi

  Center for Integrated Systems, Stanford University

• MCVITTIE James P.

  Center for Integrated Systems, Stanford University

収録刊行物

• Japanese journal of applied physics. Pt. 1, Regular papers & short notes

  Japanese journal of applied physics. Pt. 1, Regular papers & short notes 33 (7), 4446-4449, 1994-07-30

  社団法人応用物理学会

キーワード

• plasma etching
• profile distortion
• surface charging
• plasma nonuniformity
• charging voltage
• surface potential probe
• device damage

詳細情報

• CRID: 1573668927153512960
• NII論文ID: 110003903792
• NII書誌ID: AA10457675
• 本文言語コード: en
• データソース種別:
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