Fabrication of Lead Titanate Thin Film by Laser Ablation with Alternate Deposition of Lead Oxide and Titanium Oxide Precursors (<Special Issue> FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)

    • FUNAKOSHI Hiroshi
    • Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
    • FUMOTO Keigo
    • Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
    • OKUYAMA Masanori
    • Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
    • HAMAKAWA Yoshihiro
    • Department of Electrical Engineering, Faculty of Engineering Science, Osaka University

抄録

Preferentially oriented PbTiO_3 thin films have been deposited on Si and Pt substrates by the laser ablation method using an ArF excimer laser. First, PbO and TiO_2 ceramic targets are evaporated alternately, and PbTiO_3 film is prepared on a Si substrate with natural oxide in a fixed stoichiometric ratio which was achieved by controlling the number of irradiation pulses. The obtained film shows a preferred a-axis orientation. Secondly, a TiO_2 buffer layer is formed on Si a substrate with natural oxide. The lead lanthanum titanate (PLT) film deposited on this buffered layer has a preferred a-axis orientation.

収録刊行物

Japanese journal of applied physics. Pt. 1, Regular papers & short notes   [巻号一覧]

Japanese journal of applied physics. Pt. 1, Regular papers & short notes 33(9B), 5262-5264, 1994-09-30  [この号の目次]

社団法人応用物理学会

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各種コード

  • NII論文ID(NAID) :
    110003903952
  • NII書誌ID(NCID) :
    AA10457675
  • 本文言語コード :
    ENG
  • ISSN :
    0021-4922
  • 収録DB :
    NII-ELS  JSAP/JPS