Usefulness of Magnetic Neutral Loop Discharge Plasma in Plasma Processing.

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  • Tsuboi Hideo
    ULVAC Japan, Ltd., 2500 Hagisono, Chigasaki, Kanagawa 253, Japan
  • Itoh Masahiro
    ULVAC Japan, Ltd., 2500 Hagisono, Chigasaki, Kanagawa 253, Japan
  • Tanabe Masafumi
    ULVAC Japan, Ltd., 2500 Hagisono, Chigasaki, Kanagawa 253, Japan
  • Hayashi Toshio
    ULVAC Japan, Ltd., 2500 Hagisono, Chigasaki, Kanagawa 253, Japan
  • Uchida Taijiro
    ULVAC Japan, Ltd., 2500 Hagisono, Chigasaki, Kanagawa 253, Japan

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Usefulness in plasma processing is demonstrated for a plasma produced in a closed magnetic neutral loop, which consists of zero magnetic field points connected continuously. A preliminary experiment was carried out to show the advantage of magnetic neutral loop discharge (NLD) plasma in sputter etching processing of SiO2/Si wafer in the lower Ar gas pressure range. The experiment shows that a high-density plasma was obtained for Ar gas lower than 0.1 Pa and the sputter etching rate is 3 times higher than that for the usual inductively coupled plasma (ICP). In a large-loop case, the sputter etching profile obtained has a peak at a radius along the azimuthal direction. This implies that a uniform etching profile could be realized by controlling the radius of the neutral loop during process operation. The NLD plasma current induced with an rf primary one-turn antenna coil reaches up to one-third of that of the primary.

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