Time-of-Flight Distributions of Si Atoms Ejected by KrF Laser Ablation of Si₃N₄

• Nakata Yoshiki

  Department of Electrical Engineering, Kyushu University, Hakozaki, Fukuoka 812, Japan

• Okada Tatsuo

  Department of Electrical Engineering, Kyushu University, Hakozaki, Fukuoka 812, Japan

• Maeda Mitsuo

  Department of Electrical Engineering, Kyushu University, Hakozaki, Fukuoka 812, Japan

書誌事項

タイトル別名

• Time-of-Flight Distributions of Si Atoms Ejected by KrF Laser Ablation of Si3N4.

抄録

The time-of-flight (TOF) distributions of nonemissive Si atoms ejected from a KrF laser-ablated Si₃N₄ ceramics target were measured by laser-induced fluorescence spectroscopy (LIF). Bimodal velocity distribution was observed and measured velocity at the peak of the distribution, which increased with fluence, reached 15 km/s at an ablation fluence of 3.0 J/cm².

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 34 (8A), 4079-4080, 1995

  The Japan Society of Applied Physics

キーワード

• laser ablation
• Si<SUB>3</SUB>N<SUB>4</SUB>
• laser-induced fluorescence
• reacti ve cross section
• time of flight

詳細情報

• CRID: 1390001206246590848
• NII論文ID: 110003904505
• NII論文ID: 210000037650
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.34.4079
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.34.4079
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.34.4079/pdf
• 本文言語コード: en
• データソース種別:
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  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可