Formation Mechanism of p-Type Surface Conductive Layer on Deposited Diamond Films.

  • Gi Ri Sung
    Department of Electronics, School of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa 259–12, Japan
  • Mizumasa Tatsuhiro
    Department of Electronics, School of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa 259–12, Japan
  • Akiba Yukio
    Department of Electronics, School of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa 259–12, Japan
  • Hirose Yoichi
    Department of Electronics, School of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa 259–12, Japan
  • Kurosu Tateki
    Department of Electronics, School of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa 259–12, Japan
  • Iida Masamori
    Department of Electronics, School of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa 259–12, Japan

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A model of the formation of a p-type surface conductive layer on deposited diamond films is proposed. According to the model, the ionization of acid in water produces oxonium ion ( H3O+) which reacts with hydrogen on diamond films and causes the creation of holes in diamond films. The model also explains the disappearance of the p-type surface conductive layer by the action of alkaline substances. The experimental results concerning the change in electrical resistance at the surface of diamond films can be explained using the proposed model.

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