Formation Mechanism of p-Type Surface Conductive Layer on Deposited Diamond Films.
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- Gi Ri Sung
- Department of Electronics, School of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa 259–12, Japan
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- Mizumasa Tatsuhiro
- Department of Electronics, School of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa 259–12, Japan
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- Akiba Yukio
- Department of Electronics, School of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa 259–12, Japan
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- Hirose Yoichi
- Department of Electronics, School of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa 259–12, Japan
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- Kurosu Tateki
- Department of Electronics, School of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa 259–12, Japan
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- Iida Masamori
- Department of Electronics, School of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa 259–12, Japan
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抄録
A model of the formation of a p-type surface conductive layer on deposited diamond films is proposed. According to the model, the ionization of acid in water produces oxonium ion ( H3O+) which reacts with hydrogen on diamond films and causes the creation of holes in diamond films. The model also explains the disappearance of the p-type surface conductive layer by the action of alkaline substances. The experimental results concerning the change in electrical resistance at the surface of diamond films can be explained using the proposed model.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 34 (10), 5550-5555, 1995
The Japan Society of Applied Physics
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詳細情報
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- CRID
- 1390282681222754304
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- NII論文ID
- 210000037998
- 110003904649
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- NII書誌ID
- AA10457675
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- COI
- 1:CAS:528:DyaK2MXptVKnsLo%3D
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- ISSN
- 13474065
- 00214922
- http://id.crossref.org/issn/13474065
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可