Photocurrent and Photoluminescence in InGaAs/GaAs Multiple Quantum Well Solar Cells.

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  • Kitatani Takeshi
    Central Research Laboratory, Hitachi, Ltd., 1–280 Higashi–Koigakubo, Kokubunji–shi, Tokyo 185
  • Yazawa Yoshiaki
    Central Research Laboratory, Hitachi, Ltd., 1–280 Higashi–Koigakubo, Kokubunji–shi, Tokyo 185
  • Watahiki Seiji
    Central Research Laboratory, Hitachi, Ltd., 1–280 Higashi–Koigakubo, Kokubunji–shi, Tokyo 185
  • Tamura Katsumi
    Central Research Laboratory, Hitachi, Ltd., 1–280 Higashi–Koigakubo, Kokubunji–shi, Tokyo 185
  • Minemura Junko
    Central Research Laboratory, Hitachi, Ltd., 1–280 Higashi–Koigakubo, Kokubunji–shi, Tokyo 185
  • Warabisako Terunori
    Central Research Laboratory, Hitachi, Ltd., 1–280 Higashi–Koigakubo, Kokubunji–shi, Tokyo 185

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We have simultaneously measured photocurrent (PC) and photoluminescence (PL) in GaAs solar cells, including InGaAs/GaAs multiple quantum wells (MQWs) in order to clarify the optimum structure for MQW solar cells. MQW solar cells with shallow wells, for which the carrier escape probability η is calculated to be unity, exhibit a sharp rectifying PC profile. On the other hand, those with deep wells, in which η is nearly zero, exhibit degraded PC-voltage curves and strong PL from the MQWs. From these experimental results, it was found that the introduction of shallow wells with η =1 is essential to prevent degradation of cell performance and is expected to improve the conversion efficiency of MQW solar cells.

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