Kinetics and Depth Distributions of Oxygen Implanted into Si Analyzed by the Monte Carlo Simulation of Extended TRIM.

  • Yoneda Tomoaki
    Ion Engineering Research Institute Corporation, Hirakata, Osaka 573–01, Japan
  • Kajiyama Kenji
    Ion Engineering Research Institute Corporation, Hirakata, Osaka 573–01, Japan
  • Tohjou Fumiyo
    Matsushita TechnoResearch Incorporation, Moriguchi, Osaka 570, Japan
  • Yoshioka Yoshiaki
    Matsushita TechnoResearch Incorporation, Moriguchi, Osaka 570, Japan
  • Ikeda Atsushi
    Department of Physics, Ritsumeikan University Kusatsu, Shiga 525–77, Japan
  • Kisaka Yoshiaki
    Department of Physics, Ritsumeikan University Kusatsu, Shiga 525–77, Japan
  • Nishimura Tomoaki
    Department of Physics, Ritsumeikan University Kusatsu, Shiga 525–77, Japan
  • Kido Yoshiaki
    Department of Physics, Ritsumeikan University Kusatsu, Shiga 525–77, Japan

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  • Kinetics and Depth Distributions of Oxy

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Abstract

We precisely measure the depth profiles of 50-200 keV 18O+ implanted into Si and SiO2 by secondary ion mass spectrometry (SIMS) and then best-fit the on. The O-profiles derived from the RBS analysis are compared with those calculated by the extended TRIM. The present analysis revealed that the O-atoms implanted at 550° C migrated toward the surface before reaching the stoichiometry ( SiO2). The diffusion coefficient was estimated to be about 1× 10-14 cm2/ s, which was about 2 orders of magnitude larger than the value for 16O in crystalline Si at 550° C. This is possibly due to the induced dense defects distributed from the mean depth of 16O toward the surface (enhanced diffusion).

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