Development of Stable a-Si Solar Cells with Wide-Gap a-Si:H i-layers Deposited by an Inert Gas Plasma Treatment Method.

• Maruyama Eiji

  New Materials Research Center, Sanyo Electric Co., Ltd., 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan

• Hishikawa Yoshihiro

  New Materials Research Center, Sanyo Electric Co., Ltd., 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan

• Tanaka Makoto

  New Materials Research Center, Sanyo Electric Co., Ltd., 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan

• Kiyama Seiichi

  New Materials Research Center, Sanyo Electric Co., Ltd., 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan

• Tsuda Shinya

  New Materials Research Center, Sanyo Electric Co., Ltd., 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan

書誌事項

タイトル別名

• Development of Stable a-Si Solar Cells

抄録

The stability against light soaking of wide-gap hydrogenated amorphous silicon (a-Si:H) films and a-Si solar cells deposited by a newly developed inert gas plasma treatment method has been systematically investigated for the first time. The defect density (N_D) of a-Si:H films with an optical gap (E_opt) of 1.64 eV deposited by the inert gas (He, Ar, Xe) plasma treatment method was measured by a constant photocurrent method (CPM). E_opt was determined by (α hν )^1/3 versus hν plots. It was found that the inert gas plasma treatment method is capable of decreasing the initial and stabilized N_D of the wide-gap a-Si:H films to a greater extent than that achieved by the 100% SiH₄ process. In particular, the wide-gap a-Si:H film deposited using an Ar plasma treatment showed low initial and stabilized N_D of about 8× 10¹⁴ cm^-3 and 9× 10¹⁵ cm^-3, respectively, which are comparable to those of our optimized a-Si:H with E_opt~ 1.57 eV deposited from 100% SiH₄. It was also found that this deposition method is able to improve the stability of a-Si solar cells with wide-gap i-layers when compared to the 100% SiH₄ process. Experimental results indicate that this deposition method can suppress the fast light-induced degradation which is probably caused by the light-induced defects that are difficult to recover by thermal annealing at ~ 150^°C.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 37 (3A), 771-775, 1998

  The Japan Society of Applied Physics

キーワード

• a-Si:H
• plasma CVD
• inert gas
• solar cell
• stability

詳細情報

• CRID: 1390001206247746688
• NII論文ID: 110003906305
• NII論文ID: 210000044156
• NII論文ID: 130004524642
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.37.771
• ISSN: 13474065
• ISSN: 00214922
• NDL書誌ID: 4473496
• Web Site: http://id.ndl.go.jp/bib/4473496
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4473496
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.37.771
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.37.771/pdf
• 本文言語コード: en
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