The Influence of X-Ray Irradiation on Structural Relaxation and Crystallization of Amorpbous Silicon Films
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- Muto Shunsuke
- Division of Energy Science, Center for Integrated Research in Science and Engineering, Nagoya University, Chikusa–ku, Nagoya 464–8603, Japan
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- Kobayashi Yumiko
- Faculty of Nuclear Engineering, Graduate School of Engineering, Nagoya University, Chikusa–ku, Nagoya 464–8603, Japan
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- Yu Kin Man
- Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720, USA
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- Walukiewicz Wladyslaw
- Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720, USA
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- Echer Charles J.
- Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720, USA
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- Mccormick Scott
- Department of Materials Science and Engineering, University of Illinois, Urbana, IL 61801, USA
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- Abelson John R.
- Department of Materials Science and Engineering, University of Illinois, Urbana, IL 61801, USA
書誌事項
- タイトル別名
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- The Influence of X-Ray Irradiation on Structural Relaxation and Crystallization of Amorphous Silicon Films.
- Influence of X-Ray Irradiation on Struc
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The effect of intense X-ray irradiation on the short range structure and the thermal crystallization process in sputter deposited amorphous silicon films has been examined by extended energy-loss fine structure spectroscopy and transmission electron microscopy. The coordination number and the mean square disorder of the first neighbor shell in the amorphous state were increased following X-ray irradiation. The crystallization by post-annealing was delayed, the crystallized particles were dispersed homogeneously throughout the film, and the size of the individual particles was larger than in samples without X-ray irradiation. The above facts suggest that the number of unsaturated bonds is reduced by the X-ray irradiation, which can suppress the atomic diffusion and rearrangement, necessary for the crystallization.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 37 (11), 5890-5893, 1998
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681225185408
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- NII論文ID
- 110003906826
- 30021833139
- 210000043857
- 130004524285
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- NII書誌ID
- AA10457675
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- COI
- 1:CAS:528:DyaK1cXnvFGqurg%3D
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 4621601
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可