Annealing Behavior of Be- and Mg-Implants in GaAs

• Humer-Hager T.

  SIEMENS Research Laboratories

• Zwicknagl P.

  SIEMENS Research Laboratories

抄録

Mg⁺ and Be⁺ ions were implanted into semi-insulating GaAs with doses ranging from 10¹⁴ to 2·10¹⁵ cm⁻². Both implants were annealed by furnace anneal (FA) as well as by rapid thermal anneal (RTA) with various annealing temperatures and were analyzed by Secondary Ion Mass Spectroscopy (SIMS), Hall and electrochemical carrier profile measurements. Both Mg and Be as-implanted profiles can be fitted by Pearson-IV distributions. After RTA SIMS measurements show significant diffusion only for high-temperature anneals. In this case Be exhibits large diffusion tails and distinct steps in the atomic profile, whereas Mg shows only a slight dopant redistribution. However, after FA generally strong dopant redistribution and surface peaks can be observed. Mg implants yield lower activation and higher sheet resistances than Be when identical implantation doses and annealing cycles are used.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 27 (3), 428-433, 1988

  社団法人応用物理学会

キーワード

• GaAs
• implantation
• Mg
• Be
• rapid thermal anneal
• furnace anneal
• carrier profiles

詳細情報

• CRID: 1572824502223841536
• NII論文ID: 110003908059
• NII書誌ID: AA10457675
• 本文言語コード: en
• データソース種別:
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