Analysis of ac Surface Photovoltages in Accumulation Region

• Munakata Chusuke

  Central Research Laboratory, Hitachi, Ltd.

抄録

Equations for ac surface photovoltages (SPVs) excited with a chopped photon beam (PB) in the accumulation region are proposed for such semiconductors as silicon and germanium. Following the previously reported half-sided junction model for the depleted or inverted region, equations for photocurrent density and surface impedance per unit area have been newly deduced. When the surface potential is highly negative in p-type semiconductors, the maximum ac SPV in the accumulation region is limited by the conductance due to majority carrier diffusion flow. This is compared with the strong inversion region, where the mathematically maximum SPV depends upon the minority carrier diffusion flow. The voltage ratio between the two maximum ac SPVs is the same as that previously reported using the different models for dc SPVs excited with a continuous PB.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 27 (5), 759-764, 1988

  社団法人応用物理学会

キーワード

• analysis
• surface photovoltage
• accumulation region
• chopped photon beam
• photocurrent density
• surface impedance
• surface potential

詳細情報

• CRID: 1573105977201164160
• NII論文ID: 110003908125
• NII書誌ID: AA10457675
• 本文言語コード: en
• データソース種別:
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