Organotin-Containing Resists (TMAR) for X-Ray Lithography : Resist Material and Process :

• TANAKA,Youko

  Materials and Electronic Devices Lab, .Mitsunishi Electric Corporation

• HORIBE,Hideo

  Materials and Electronic Devices Lab, .Mitsunishi Electric Corporation

• KUBOTA,Shigeru

  Materials and Electronic Devices Lab, .Mitsunishi Electric Corporation

• KOEZUKA,Hiroshi

  Materials and Electronic Devices Lab, .Mitsunishi Electric Corporation

• YOSHIOKA,Nobuyuki

  LSI R&D Lab, Mitsunishi Electric Corporation

• AOYAMA,Satoshi

  LSI R&D Lab, Mitsunishi Electric Corporation

• WATAKABE,Yaichioh

  LSI R&D Lab, Mitsunishi Electric Corporation

• MAEZAKI,Hideki

  Photon Factory, National Laboratory for High Energy Physics

Abstract

The newly synthesized polymers containing organotin indicate higher sensitivities (2500 mJ/cm^2) to synchrotron radiation X-ray (SR X-ray).The sensitivities and the imaging types depend on the amount of tin atoms incorporated in the polymers. Their resistance of the O_2 gas reactive ion etching is 50 times higher in comparison with poly(methyl methacrylate) (PMMA). The results for electron beam (EB) are also reported.

Journal

• JJAP series

  JJAP series 4 130-132, 1991-01-31

  Japanese Journal of Applied Physics

Keywords

• SR X-ray
• X-ray lithography
• organotin groups
• reactive ion etching
• sensitivity curves
• electron beam

Details

• CRID: 1540572720307573248
• NII Article ID: 110003912790
• NII Book ID: AA11020413
• Web Site: http://dl.ndl.go.jp/info:ndljp/pid/10472312
• Text Lang: en
• Data Source:
  • NDL-Digital
  • CiNii Articles