Continuous Wave Operation at Room Temperature of InGaN Laser Diodes Fabricated on 4H-SiC Substrates.

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  • Kuramata Akito
    Fujitsu Laboratories Ltd., 10–1 Morinosato–Wakamiya, Atsugi 243–0197, Japan
  • Kubota Shin–ichi
    Fujitsu Laboratories Ltd., 10–1 Morinosato–Wakamiya, Atsugi 243–0197, Japan
  • Soejima Reiko
    Fujitsu Laboratories Ltd., 10–1 Morinosato–Wakamiya, Atsugi 243–0197, Japan
  • Domen Kay
    Fujitsu Laboratories Ltd., 10–1 Morinosato–Wakamiya, Atsugi 243–0197, Japan
  • Horino Kazuhiko
    Fujitsu Laboratories Ltd., 10–1 Morinosato–Wakamiya, Atsugi 243–0197, Japan
  • Hacke Peter
    Fujitsu Laboratories Ltd., 10–1 Morinosato–Wakamiya, Atsugi 243–0197, Japan
  • Tanahashi Toshiyuki
    Fujitsu Laboratories Ltd., 10–1 Morinosato–Wakamiya, Atsugi 243–0197, Japan

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We demonstrated continuous wave operation at room temperature of InGaN laser diodes fabricated on 4H-SiC substrates. The threshold current and voltage were 60 mA and 8.3 V, respectively. The threshold current corresponds to a threshold current density of 4 kA/cm2. No difference in the threshold current or voltage was observed between 4H-SiC and 6H-SiC substrates. The laser oscillation was observed up to 80°C for CW operation. The peak lasing wavelength was 404.4 nm. The lifetime was 57 hours under automatic power controlled conditions with a constant output power of 1 mW at 25°C.

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