Gravity-Dependent Silicon Crystal Growth Using a Laser Heating System in Drop Shaft.

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  • Nakata Johsuke
    Kyoto Semiconductor Corporation, 418–9 Yodo Saime–cho, Fushimi–ku, Kyoto 613
  • Inagawa Ikuo
    Kyoto Semiconductor Corporation, 418–9 Yodo Saime–cho, Fushimi–ku, Kyoto 613
  • Yamamoto Katsuro
    Kyoto Semiconductor Corporation, 418–9 Yodo Saime–cho, Fushimi–ku, Kyoto 613
  • Honda Hironori
    Kyoto Semiconductor Corporation, 418–9 Yodo Saime–cho, Fushimi–ku, Kyoto 613
  • Kuratani Noriaki
    Kyoto Semiconductor Corporation, 418–9 Yodo Saime–cho, Fushimi–ku, Kyoto 613
  • Furuichi Shuhei
    Kyoto Semiconductor Corporation, 418–9 Yodo Saime–cho, Fushimi–ku, Kyoto 613
  • Noguchi Toru
    Department of Mechanical Engineering, Faculty of Engineering, Hokkaido University, Sapporo 060
  • Kudoh Masayuki
    Department of Metallurgical Engineering, Faculty of Engineering, Hokkaido University, Sapporo 060

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Spherical silicon crystals were grown without a crucible within about 10 s under microgravity in a drop shaft. To perform crystal growth in a short period, a compact crystal growth system which can be installed in a drop capsule was developed. A CO2 laser with the output power of 25 W was focused to approximately 300 µ m to heat the crystal seeds. We used silicon crystal rod arrays as seeds and moved the arrays with a motor-driven sliding mechanism. This method allowed us to observe variations of crystal growth when gravity changed successively from 1 G to microgravity in a single drop test.

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