Stress-Induced Raman Frequency Shift in CuInSe₂ Thin Films Prepared by Laser Ablation

• Taguchi Isao

  Department of Physics, Shimane Medical University, Izumo 693, Japan

• Ezumi Hiromichi

  Department of Electrical Engineering, Hiroshima–Denki Institute of Technology, Hiroshima 739–03, Japan

• Keitoku Susumu

  Hiroshima Women"s University, Hiroshima 734, Japan

• Tamaru Takeyoshi

  Department of Electrical Engineering, Hiroshima–Denki Institute of Technology, Hiroshima 739–03, Japan

• Osono Hiroto

  Department of Electrical Engineering, Hiroshima–Denki Institute of Technology, Hiroshima 739–03, Japan

書誌事項

タイトル別名

• Stress-Induced Raman Frequency Shift in CuInSe2 Thin Films Prepared by Laser Ablation.

抄録

Thin films of CuInSe₂ have been prepared by laser ablation using a Nd:YAG laser at substrate temperatures up to 450^° C. Raman scattering experiments have shown that the frequency of the A₁ phonon mode for these films shifts markedly to higher frequencies similarly with CuInSe₂ single crystals under compression. The existence of compressive stress in the films has been confirmed by observing the bending of a cover glass used as substrate. The magnitude and temperature dependence of the stress estimated from the frequency shifts agree with those determined from the degree of bending.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 34 (1B), L135-L137, 1995

  The Japan Society of Applied Physics

キーワード

• CuInSe<SUB> 2</SUB>
• laser ablation
• thin film
• Raman scattering
• residual stress
• X-ray diffraction

詳細情報

• CRID: 1390282681224035456
• NII論文ID: 110003922703
• NII論文ID: 210000038479
• NII論文ID: 130004520880
• NII書誌ID: AA10650595
• DOI: 10.1143/jjap.34.l135
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.34.L135
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.34.L135/pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可