Auger Depth Profiles of a GaAs/AlAs Superlattice Structure Obtained with O<sub>2</sub> <sup>+</sup> and Ar<sup>+</sup> Ion Sputtering

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  • Lee Hyung–Ik
    Department of Applied Physics, Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan
  • Mitsuhashi Riichiro
    Department of Applied Physics, Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan
  • Inoue Masahiko
    Department of Applied Physics, Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan
  • Shimizu Ryuichi
    Department of Applied Physics, Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan
  • Hofmann Siegfried
    Department of Applied Physics, Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan

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  • Auger Depth Profiles of a GaAs/AlAs Superlattice Structure Obtained with O2+ and Ar+ Ion Sputtering.

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Employment of a LaB6 cathode with Re filament for an electron-bombardment ion gun has enabled O2+ ions as well as Ar+ ions to be provided for surface analysis in ultrahigh vacuum. This technique was applied to depth profiling of a GaAs/AlAs superlattice by monitoring the Auger peak-to-background ratio of the following high-energy peaks; Ga-LMM (1066 eV), As-LMM (1222 eV), Al-KLL (1390 eV) and O-KVV (508 eV). The energy shift of O-KVV Auger peak was also monitored. Results show the deficiency of As atoms and the formation of Al oxides at the surface of O+2-sputtered AlAs layers.

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