Ultralow Resistivity in Langmuir-Blodgett Heterofilms

• Hino Taro

  Department of Electrical Engineering, Kanagawa University

抄録

Resistivity of LB heterofilms with the double layer consisting of arachidic acid (nonpolar) and TCNQ-derivative (polar) LB films was investigated at room temperature. As a result, ultralow resistivity of 10⁻⁸∼10⁻⁹Ω·cm was measured in the direction of the film surface. Furthermore, very high current density of about 4.1×10⁵ A/cm² was observed. Such ultralow resistivity and very high current density seem to be due to the two-dimensional potential well with electron gas generated in the LB heterofilms.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 29 (3), L486-L489, 1990

  社団法人応用物理学会

キーワード

• Langmuir Blodgett (LB) heterofilm
• ultralow resistivity
• switching
• potential well
• electron gas

詳細情報

• CRID: 1570854177337443968
• NII論文ID: 110003923325
• NII書誌ID: AA10650595
• 本文言語コード: en
• データソース種別:
  • CiNii Articles