Spatial Distribution of SiH<SUB>3</SUB> Radicals in RF Silane Plasma

• Itabashi Naoshi

  Department of Electronics, Faculty of Engineering, Nagoya University

• Nishiwaki Nobuki

  Department of Electronics, Faculty of Engineering, Nagoya University

• Magane Mitsuo

  Department of Electronics, Faculty of Engineering, Nagoya University

• Naito Susumu

  Department of Electronics, Faculty of Engineering, Nagoya University

• Goto Toshio

  Department of Electronics, Faculty of Engineering, Nagoya University

• Matsuda Akihisa

  Electrotechnical Laboratory

• Yamada Chikashi

  Institute for Molecular Science

• Hirota Eizi

  Institute for Molecular Science

抄録

Infrared diode laser absorption spectroscopy (IRLAS) was applied to the measurement of SiH₃ in a RF silane P-CVD chamber with parallel plate electrodes. The spatial distribution of SiH₃ radicals between the electrodes was measured to obtain the incident flux density of SiH₃ to the electrode surface. The growth rate of a-Si:H was also measured in the same plasma. These data were used to estimate the contribution of SiH₃ to a-Si:H thin-film growth.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 29 (3), L505-L507, 1990

  社団法人応用物理学会

キーワード

• amorphous silicon thin film
• infrared diode laser absorption spectroscopy (IRLAS)
• SiH<SUB>3</SUB> radical density
• spatial distribution of SiH<SUB>3</SUB>
• RF silane plasma
• plasma CVD

詳細情報

• CRID: 1573668927104529536
• NII論文ID: 110003923330
• NII書誌ID: AA10650595
• 本文言語コード: en
• データソース種別:
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