A New Technique to Produce Clean and Thin Silicon Films <I>In Situ</I> in a UHV Electron Microscope for TEM-TED Studies of Surfaces

• Ozawa Soh-ichiro

  Physics Department, Tokyo Institute of Technology

• Yamanaka Akira

  Physics Department, Tokyo Institute of Technology

• Kobayashi Kunio

  Physics Department, Tokyo Institute of Technology

• Tanishiro Yasumasa

  Physics Department, Tokyo Institute of Technology

• Yagi Katsumichi

  Physics Department, Tokyo Institute of Technology

抄録

A new technique of in situ oxygen gas reaction thinning of Si films at around 750–800°C in an ultrahigh-vacuum electron microscope was developed. The technique produced films as thin as 10 to 20 nm. Such a thin film allows us to observe surface atomic steps, out-of-phase boundaries and {1/7 0}, {1/7 1/7} and {2/7 0} spots from the Si(111)7×7 surface. These spots were not observed in previous studies, having been masked by strong inelastic scattering. The technique is useful not only for detecting clear diffraction spots of kinematical intensity for surface structure analysis but also for observation of high-resolution plan-view structure images of clean and adsorbed surfaces.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 29 (4), L655-L658, 1990

  社団法人応用物理学会

キーワード

• thin Si films
• reaction thinning of Si films
• spiral steps
• out-of-phase boundaries
• Si(111)7×7

詳細情報

• CRID: 1571135652314136704
• NII論文ID: 110003923375
• NII書誌ID: AA10650595
• 本文言語コード: en
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