Novel Window-Structure AlGaInP Visible-Light Laser Diodes with Non-Absorbing Facets Fabricated by Utilizing GaInP Natural Superlattice Disordering

• Ueno Yoshiyasu

  Opto-Electronics Research Laboratories, NEC Corporation

• Fujii Hiroaki

  Opto-Electronics Research Laboratories, NEC Corporation

• Kobayashi Kenichi

  Opto-Electronics Research Laboratories, NEC Corporation

• Endo Kenji

  Opto-Electronics Research Laboratories, NEC Corporation

• Gomyo Akiko

  Opto-Electronics Research Laboratories, NEC Corporation

• Hara Kunihiro

  Opto-Electronics Research Laboratories, NEC Corporation

• Kawata Seiji

  Opto-Electronics Research Laboratories, NEC Corporation

• Yuasa Tonao

  Opto-Electronics Research Laboratories, NEC Corporation

• Suzuki Tohru

  Opto-Electronics Research Laboratories, NEC Corporation

抄録

Window-structure AlGaInP visible-light (λ_L=680 nm) laser diodes (LDs) have been fabricated, for the first time, by utilizing GaInP natural superlattice (NSL) disordering with selective Zn diffusion. The bandgap energy for the active layer near the mirror facets is increased by 70 meV by the NSL disordering. An 80 mW output power in a fundamental transverse-mode has been achieved for the uncoated window LDs under 1 μsec long pulsed operations. The maximum output power density for the window LDs is estimated to be 10 MW/cm², which is five times higher than that for conventional LDs.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 29 (9), L1666-L1668, 1990

  社団法人応用物理学会

キーワード

• window-structure
• natural superlattice
• disordering
• high power
• AlGaInP
• visible-light laser
• MOVPE
• bandgap energy
• Zn diffusion

詳細情報

• CRID: 1572543027196441088
• NII論文ID: 110003923678
• NII書誌ID: AA10650595
• 本文言語コード: en
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