DC-Bias-Field-Induced Dielectric Relaxation in Antiferroelectric Phase of TFMHPOBC

• Moritake Hiroshi

  Department of Electronic Engineering, Faculty of Engineering, Osaka University

• Ozaki Masanori

  Department of Electronic Engineering, Faculty of Engineering, Osaka University

• Yoshino Katsumi

  Department of Electronic Engineering, Faculty of Engineering, Osaka University

Abstract

Dielectric properties in TFMHPOBC (4-(1,1,1-trifluoromethyl-heptyloxycarbonyl) phenyl 4′-octyloxybiphenyl-4-carboxylate) have been investigated as functions of temperature and dc bias field. In the antiferroelectric phase under no bias field, relaxation due to the soft mode and molecular rotation around the short axis are observed. Under dc bias field, a new relaxation is observed in chiral smectic C_A (Sm C_A^*). The dielectric strength of this relaxation depends on the bias field, while the relaxation frequency is not affected by the dc bias field.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 32 (10), L1432-L1435, 1993

  The Japan Society of Applied Physics

Keywords

• ferroelectric liquid crystal
• antiferroelectric liquid crystal
• dielectric relaxation
• Goldstone mode
• soft mode

Details

• CRID: 1570854177335750400
• NII Article ID: 110003924263
• NII Book ID: AA10650595
• Text Lang: en
• Data Source:
  • CiNii Articles