P–GaN/N–InGaN/N–GaN Double-Heterostructure Blue-Light-Emitting Diodes

• Nakamura Shuji

  Department of Research and Development, Nichia Chemical Industries, Ltd.

• Senoh Masayuki

  Department of Research and Development, Nichia Chemical Industries, Ltd.

• Mukai Takashi

  Department of Research and Development, Nichia Chemical Industries, Ltd.

Abstract

P–GaN/n–InGaN/n–GaN double-heterostructure (DH) blue-light-emitting diodes (LEDs) were fabricated successfully for the first time. The output power was 125 μW and the external quantum efficiency was as high as 0.22% at a forward current of 20 mA at room temperature. The peak wavelength and the full width at half-maximum (FWHM) of the electroluminescence (EL) were 440 nm and 180 meV, respectively. This value FWHM of was the smallest ever reported for blue GaN LEDs.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 32 (1), L8-L11, 1993

  The Japan Society of Applied Physics

Keywords

• p–GaN/n–InGaN/n–GaN
• double heterostructure
• output power
• external quantum efficiency
• blue LEDs
• blue band-edge emission

Details

• CRID: 1571417127289543936
• NII Article ID: 110003924343
• NII Book ID: AA10650595
• Text Lang: en
• Data Source:
  • CiNii Articles