InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets.

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  • Nakamura Shuji
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Senoh Masayuki
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Nagahama Shin–ichi
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Iwasa Naruhito
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Yamada Takao
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Matsushita Toshio
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Kiyoku Hiroyuki
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Sugimoto Yasunobu
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan

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InGaN multi-quantum-well (MQW)-structure laser diodes (LDs) fabricated from III-V nitride materials were grown by metalorganic chemical vapor deposition on sapphire substrate with (11\=20) orientation (A face). The mirror facet for a laser cavity was formed by cleaving the substrate along the (1\=102) orientation (R-face). As an active layer, the InGaN MQW structure was used. The InGaN MQW LDs showed a sharp peak of light output at 415.6 nm that had a full width at half-maximum of 0.05 nm under pulsed current injection of 1.17 A at room temperature. The laser threshold current density was 9.6 kA/cm2.

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