The Fraction of Sp<sup>3</sup> Bonding in Carbon Thin Film Prepared Using Pulsed Laser Deposition

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  • Yamamoto Kazuhiro
    National Institute of Materials and Chemical Research, 1–1 Higashi, Tsukuba, Ibaraki 305, Japan
  • Koga Yoshinori
    National Institute of Materials and Chemical Research, 1–1 Higashi, Tsukuba, Ibaraki 305, Japan
  • Fujiwara Shuzo
    National Institute of Materials and Chemical Research, 1–1 Higashi, Tsukuba, Ibaraki 305, Japan
  • Kokai Fumio
    Laser Laboratory, Institute of Research and Innovation, 1201 Takada, Kashiwa, Chiba 277, Japan

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タイトル別名
  • The Fraction of Sp3 Bonding in Carbon Thin Film Prepared Using Pulsed Laser Deposition.
  • Fraction of Sp3 Bonding in Carbon Thin

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The fraction of sp3 bonding in carbon thin film prepared using pulsed laser deposition with a KrF excimer laser is investigated. The carbon film deposited at the laser fluence of 0.2 J/cm2 has a graphitic structure. It is suggested that the neutral species of C3 is effective in the formation of this structure. The C+ ion increases with a laser fluence higher than 0.9 J/cm2 and the sp3 bonding fraction in carbon film increases. The sp3 fraction in the film also increases with a negative bias to the substrate. The impact of energetic C+ species to the substrate is attributed to the formation of sp3 bonding.

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