Growth of p-type Zinc Oxide Films by Chemical Vapor Deposition.

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  • Minegishi Kazunori
    Department of Electrical Engineering and Computer Science, Yamanashi University, 4 Takeda, Kofu 400, Japan
  • Koiwai Yasushi
    Department of Electrical Engineering and Computer Science, Yamanashi University, 4 Takeda, Kofu 400, Japan
  • Kikuchi Yukinobu
    Department of Electrical Engineering and Computer Science, Yamanashi University, 4 Takeda, Kofu 400, Japan
  • Yano Koji
    Department of Electrical Engineering and Computer Science, Yamanashi University, 4 Takeda, Kofu 400, Japan
  • Kasuga Masanobu
    Department of Electrical Engineering and Computer Science, Yamanashi University, 4 Takeda, Kofu 400, Japan
  • Shimizu Azuma
    Department of Electrical Engineering and Computer Science, Yamanashi University, 4 Takeda, Kofu 400, Japan

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タイトル別名
  • Growth of p-type Zinc Oxide Films by Ch

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The growth of p-type ZnO film was realized for the first time by the simultaneous addition of NH3 in carrier hydrogen and excess Zn in source ZnO powder. The resistivity was typically 100 Ω ·cm. A model showing nitrogen incorporation suggests the possibility of realizing p-type ZnO film of low resistivity by optimizing thermal annealing.

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