Substrate-Orientation Dependence on Structure and Magnetic Properties of MnAs Epitaxial Layers.

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  • Morishita Yoshitaka
    Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan
  • Iida Koichi
    Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan
  • Abe Junya
    Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan
  • Sato Katsuaki
    Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan

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  • Substrate-Orientation Dependence on Str

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Ferromagnetic MnAs layers were grown on (001), (111)A, and (111)B GaAs substrates by molecular-beam epitaxy at substrate temperatures (T s) in the range from 150 to 400° C. The crystal structure of the MnAs was NiAs type and its orientation was found to change depending on the substrate, (\=1101) for the (001) GaAs substrate and (0001) for the (111)A and (111)B substrates at T s between 300 and 400° C. Polar magneto-optical Kerr-effect measurement demonstrated a crystal-orientation dependence of Kerr rotation and Kerr ellipticity spectra of the MnAs epitaxial layers.

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