Synergistic Enhancement of Direct Synchrotron Radiation Etching of a Resist by a Low-Energy Oxygen Beam

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The effect of the simultaneous irradiation of a low-energy oxygen ion beam with synchrotron radiation (SR) was investigated. The purpose was the enhancement of the direct resist etching by SR. Although the removal by sputtering of the resist was observed due to the wide energy width of the ion beam used, it was confirmed that the net SR etching, which was estimated after subtraction of the sputtering contribution, increased about two times. Possibilities for the enhancement of this “synergistic effect” induced by low-energy ion beam bombardment to improve the direct SR etching and make it more practical are also discussed.

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詳細情報 詳細情報について

  • CRID
    1571980077244032640
  • NII論文ID
    110003925897
  • NII書誌ID
    AA10650595
  • 本文言語コード
    en
  • データソース種別
    • CiNii Articles

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