Synergistic Enhancement of Direct Synchrotron Radiation Etching of a Resist by a Low-Energy Oxygen Beam
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- Murakami Hiroshi
- Electrotechnical Laboratory
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- Ichimura Shingo
- Electrotechnical Laboratory
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- Shimizu Hazime
- Electrotechnical Laboratory
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- Kudo Isao
- Electrotechnical Laboratory
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- Atoda Nobufumi
- Electrotechnical Laboratory
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The effect of the simultaneous irradiation of a low-energy oxygen ion beam with synchrotron radiation (SR) was investigated. The purpose was the enhancement of the direct resist etching by SR. Although the removal by sputtering of the resist was observed due to the wide energy width of the ion beam used, it was confirmed that the net SR etching, which was estimated after subtraction of the sputtering contribution, increased about two times. Possibilities for the enhancement of this “synergistic effect” induced by low-energy ion beam bombardment to improve the direct SR etching and make it more practical are also discussed.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 26 (11), L1774-L1776, 1987
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詳細情報 詳細情報について
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- CRID
- 1571980077244032640
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- NII論文ID
- 110003925897
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- NII書誌ID
- AA10650595
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- 本文言語コード
- en
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- データソース種別
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- CiNii Articles