Violet InGaN/GaN/AlGaN-Based Laser Diodes with an Output Power of 420 mW.

DOI Web Site Web Site Web Site 被引用文献29件 参考文献23件
  • Nakamura Shuji
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Senoh Masayuki
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Nagahama Shin–ichi
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Iwasa Naruhito
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Yamada Takao
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Matsushita Toshio
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Kiyoku Hiroyuki
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Sugimoto Yasunobu
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Kozaki Tokuya
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Umemoto Hitoshi
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Sano Masahiko
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Chocho Kazuyuki
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan

書誌事項

タイトル別名
  • Violet InGaN GaN AlGaN - Based Laser Di

この論文をさがす

抄録

The InGaN multiquantum-well-structure laser diode (LD) was grown on epitaxially laterally overgrown GaN on sapphire. The LDs with cleaved mirror facets showed an output power as high as 420 mW per facet under room temperature continuous-wave (CW) operation. The fundamental transverse mode was observed up to an output power of 100 mW. The lifetime of the LDs at a constant output power of 30 mW was longer than 160 h under CW operation at an ambient temperature of 50°C. The wavelength drift caused by the temperature change was estimated to be 0.06 nm/K, while that of the red AlInGaP LDs was 0.3 nm/K.

収録刊行物

被引用文献 (29)*注記

もっと見る

参考文献 (23)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ