Reactive Ion Beam Etching Using a Broad Beam ECR Ion Source

• Seitaro Matsuo

• Yoshio Adachi

抄録

A broad beam ion source using a microwave electron cyclotron resonance (ECR) discharge has been newly developed, giving high reliability in operation. The ion source operates at gas pressures higher than about 3×10 -5 Torr, and an ion current density of 1 mA/cm 2 is obtained at an ion extraction voltage of 1000 V. By introducing C 4 F 8 and SiCl 4 into the ion source, SiO 2 and Al are etched at rates greater than 1000 Å/min, with high selectivities and high-accuracy pattern transfer.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 21 (1A), L4-, 1982-01-01

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360847871767890432
• NII論文ID: 110003928766
• NII論文ID: 210000022163
• NII書誌ID: AA10650595
• DOI: 10.1143/jjap.21.l4
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.21.L4
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.21.L4/pdf
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