Frequency Stabilization of AlGaAs Semiconductor Laser Based on the ⁸⁵Rb-D₂ Line

• Hidemi Tsuchida

• Motoichi Ohtsu

• Toshiharu Tako

• Naimu Kuramochi

• Nobunori Oura

Abstract

The frequency of an AlGaAs semiconductor laser was stabilized by using the linear absorption spectrum of the 85 Rb-D 2 line. By controlling the injection current, the frequency stability of 3.0×10 -10 ≧σ≧1.4×10 -12 was obtained for 10 ms≦τ≦500 s. First observation of the saturated absorption spectrum of the 85 Rb-D 2 line is demonstrated, which can be used as a frequency reference to improve the frequency stability.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 21 (9A), L561-, 1982-09-01

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360566396791203200
• NII Article ID: 110003928846
• NII Article ID: 210000022228
• NII Book ID: AA10457675
• DOI: 10.1143/jjap.21.l561
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.21.L561
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.21.L561/pdf
• Data Source:
  • Crossref
  • CiNii Articles