Fluorescence and its Nd<SUP>3+</SUP> Concentration Dependence of Nd-Doped SiO<SUB>2</SUB> Glasses Prepared by Plasma Torch CVD

• Arai Kazuo

  Electrotechnical Laboratory

• Namikawa Hiroshi

  Electrotechnical Laboratory

• Kumata Ken

  Electrotechnical Laboratory

• Ishii Yoshiro

  Science University of Tokyo

• Tanaka Hiroaki

  Science University of Tokyo

• Iida Ichio

  Electrotechnical Laboratory

抄録

The time resolved fluorescence spectra and their Nd³⁺ concentration C_Nd dependence were observed in Nd-doped SiO₂ glasses prepared by plasma torch CVD. The ⁴F_3⁄2 radiative emissions observed consist of a fast (FDC, τ_m\simeq0.35 μs) and a slow (SDC, τ_m\simeq470 μs) decay component. The FDC are characterized by the intensity ratio (⁴F_3⁄2–⁴I_11⁄2/⁴F_3⁄2–⁴I_9⁄2>1), but the SDC by the inverse ratio and the spectral shift to the longer wavelength. The SDC increases and reaches almost constant values in higher C_Nd. The FDC can not be observed in very low C_Nd region, but increases abraptly in higher C_Nd. The FDC is ascribed to the Nd³⁺ in the clustering microstructure and the SDC is ascribed to the isolated Nd³⁺ in crystal field unique to unitary SiO₂ glass.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 22 (7), L397-L399, 1983

  社団法人応用物理学会

詳細情報

• CRID: 1573387452127048192
• NII論文ID: 110003929230
• NII書誌ID: AA10650595
• 本文言語コード: en
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