Current Injection Effects in a Nb/AlO_x-Al/Nb/n-InSb Triode

• Hirotaka Tamura

• Shinya Hasuo

• Toyoshi Yamaoka

抄録

A Nb/AlO x -Al/Nb/n-InSb triode has been fabricated and tested. The device is made on the (100) surface of undoped n-type InSb. The fabrication process is similar to that for Nb/Al-AlO x /Nb Josephson junctions. The transfer efficiency for injected electrons through a 240 nm thick Nb base layer was measured to be 1.6×10 -4 at 4.2 K.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 24 (9A), L709-, 1985-09-01

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360847871768617472
• NII論文ID: 110003929920
• NII論文ID: 210000024314
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.24.l709
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.24.L709
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.24.L709/pdf
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