Fabrication of Metal-Oxide-Semiconductor Field-Effect-Transistor-Structured Silicon Field Emitters with a Polysilicon Dual Gate.

DOI Web Site Web Site Web Site 被引用文献7件 参考文献27件
  • Kanemaru Seigo
    Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305, Japan
  • Ozawa Ken
    Department of Electrical and Electronic Engineering, Faculty of Engineering, Musashi Institute of Technology, 1–28–1 Tamazutsumi, Setagaya–ku, Tokyo 158, Japan
  • Ehara Keigo
    Toyokohan Co., Ltd., 1296 Higashitoyoi, Kudamatsu, Yamaguchi 744, Japan
  • Hirano Takayuki
    Kobe Steel Ltd., 1–5–5 Takatsukadai, Nishi–ku, Kobe, Hyogo 651–22, Japan
  • Tanoue Hisao
    Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305, Japan
  • Itoh Junji
    Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305, Japan

書誌事項

タイトル別名
  • Fabrication of Metal-Oxide-Semiconducto

この論文をさがす

抄録

We have fabricated a new silicon field emitter that incorporates a metal-oxide-silicon field-effect transistor (MOSFET) structure with a dual gate. One gate is an extraction gate that extracts electrons from the emitter. The other is a control gate that controls the channel conductance in order to regulate the emission current. The fabrication process is simple and compatible with conventional LSI process. The present device exhibits excellent controllability and stability of the emission current. This is because electron emission from the emitter is precisely regulated by the channel current of the built-in MOSFET.

収録刊行物

被引用文献 (7)*注記

もっと見る

参考文献 (27)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ