A High Power MOS-FET with a Vertical Drain Electrode and Meshed Gate Structure : A-5: FIELD EFFECT TRANSISTORS (II)
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- YOSHIDA Isao
- Central Research Laboratory, Hitachi Ltd.
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- KUBO Masaharu
- Central Research Laboratory, Hitachi Ltd.
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- OCHI Shikayuki
- Central Research Laboratory, Hitachi Ltd.
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- OHMURA Yoshito
- Central Research Laboratory, Hitachi Ltd.
この論文をさがす
収録刊行物
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- Japanese journal of applied physics. Supplement
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Japanese journal of applied physics. Supplement 15 (1), 179-183, 1976
社団法人応用物理学会
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詳細情報
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- CRID
- 1574231877184193152
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- NII論文ID
- 110003953910
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- NII書誌ID
- AA10457686
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- ISSN
- 00214922
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- 本文言語コード
- en
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- データソース種別
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- CiNii Articles