A 256bit Nonvolatile Static Random Access Memory with MNOS Memory Transistors : A-5: FIELD EFFECT TRANSISTORS (II)
-
- SAITO S.
- Toshiba Research and Development Center, Tokyo Shibaura Electric Co., Ltd.
-
- ENDO N.
- Toshiba Research and Development Center, Tokyo Shibaura Electric Co., Ltd.
-
- UCHIDA .
- Toshiba Research and Development Center, Tokyo Shibaura Electric Co., Ltd.
-
- TANAKA T.
- Toshiba Research and Development Center, Tokyo Shibaura Electric Co., Ltd.
-
- NISHI Y.
- Toshiba Research and Development Center, Tokyo Shibaura Electric Co., Ltd.
-
- TAMARU K.
- Toshiba Research and Development Center, Tokyo Shibaura Electric Co., Ltd.
この論文をさがす
収録刊行物
-
- Japanese journal of applied physics. Supplement
-
Japanese journal of applied physics. Supplement 15 (1), 185-190, 1976
社団法人応用物理学会
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1573105977277356928
-
- NII論文ID
- 110003953911
-
- NII書誌ID
- AA10457686
-
- ISSN
- 00214922
-
- 本文言語コード
- en
-
- データソース種別
-
- CiNii Articles