Emission Characteristics of Ion-Implanted Silicon Emitter Tips.

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  • Hirano Takayuki
    Kobe Steel, Ltd., 1–5–5 Takatsukadai, Nishi–ku, Kobe, Hyogo 651–22, Japan
  • Kanemaru Seigo
    Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305, Japan
  • Tanoue Hisao
    Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305, Japan
  • Itoh Junji
    Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305, Japan

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An ion implantation technique has been applied to control the energy band structure of Si field-emitter tip surface. B+ or P+ ions were implanted after fabrication of a gated emitter structure. No changes in emitter structure were observed after ion implantation and successive annealing at 800° C. Current-voltage ( I-V ) characteristics of n, p, p/n and n/p emitter tips were measured: p/n indicates an n-type tip with B+ ions implanted into the tip surface. It was found from the experimental results that n and p/n tips had I-V characteristics in agreement with the Fowler-Nordheim theory. The p and n/p tips, on the other hand, exhibited a current saturation property in high electric field. The present saturation mechanism is explained by considering the energy band structure of the tip surface.

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