Numerical Prediction for 2GHz RF Amplifier of SOI Power MOSFET.

• Omura Ichiro

  Research and Development Center, Toshiba Corporation, 1 Komukai Toshibacho, Saiwai–ku, Kawasaki 210, Japan

• Nakagawa Akio

  Research and Development Center, Toshiba Corporation, 1 Komukai Toshibacho, Saiwai–ku, Kawasaki 210, Japan

抄録

RF performance of a metal-oxide-semiconductor field effect transistor (MOSFET) on silicon-on-insulator (SOI) with 0.5 µm gate length and 2 µm buried oxide thickness has been numerically predicted using a 2-D device simulator to check its applicability to digital cellular telephones. The device has been found to have excellent performance for a 2 GHz high-power amplifier at a power supply of 2.8 V. The calculated cutoff frequency and maximum frequency of oscillation for the intrinsic MOSFET are 23 GHz and 65 GHz, respectively. The SOI MOSFET is a promising candidate for replacing GaAs MESFETs in 2 GHz RF applications.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 34 (2B), 827-830, 1995

  The Japan Society of Applied Physics

キーワード

• silicon-on-insulator
• SOI
• microwave
• MOSFET
• RF power amplifier
• device simulation
• small-signal analysis
• large-signal analysis

詳細情報

• CRID: 1390001206245298944
• NII論文ID: 110003954818
• NII論文ID: 30021821901
• NII論文ID: 130004520959
• NII論文ID: 210000038318
• NII書誌ID: AA00690800
• DOI: 10.1143/jjap.34.827
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.34.827
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.34.827/pdf
• 本文言語コード: en
• データソース種別:
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  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可