Micropatterning of Ferroelectric Bi4Ti3O12 Using Electron-Beam-Induced Reaction of Metal Octylate Films.

  • Okamura Soichiro
    Department of Electronics and Computer Science, Faculty of Science and Engineering, Science University of Tokyo in Yamaguchi, 1–1–1 Daigaku–dori, Onoda, Yamaguchi 756, Japan
  • Yagi Yukie
    Department of Electronics and Computer Science, Faculty of Science and Engineering, Science University of Tokyo in Yamaguchi, 1–1–1 Daigaku–dori, Onoda, Yamaguchi 756, Japan
  • Ando Shizutoshi
    Department of Applied Physics, Faculty of Science, Science University of Tokyo, 1–3 Kagurazaka, Shinjuku–ku, Tokyo 162, Japan
  • Tsukamoto Takeyo
    Department of Applied Physics, Faculty of Science, Science University of Tokyo, 1–3 Kagurazaka, Shinjuku–ku, Tokyo 162, Japan
  • Mori Katsumi
    Department of Electronics and Computer Science, Faculty of Science and Engineering, Science University of Tokyo in Yamaguchi, 1–1–1 Daigaku–dori, Onoda, Yamaguchi 756, Japan

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  • Micropatterning of Ferroelectric Bi<sub> 4</sub>Ti<sub> 3</sub>O<sub> 12</sub> Using Electron-Beam-Induced Reaction of Metal Octylate Films

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Abstract

Micropatterning of ferroelectric Bi4Ti3O12 was carried out using an electron-beam-induced reaction of metal octylate films. Bismuth and titanium octylates were used as starting materials. Precursor solutions were prepared by mixing the octylates at a Bi:Ti molar ratio of 5.2:3.0 and diluting with acetone. The metal octylates exhibited negative exposure characteristics upon electron beam irradiation: a sensitivity of 1.5 × 10-4 C/cm2 and a gamma value of 2. Precursor micropatterns were formed by electron beam irradiation on the spin-coated octylate films and successive development with toluene. The precursor micropatterns were calcined at 450°C for 10 min and sintered at 800°C for 30 min in air. A 65 × 80 µm2 precursor micropattern was crystallized into the single-phase of Bi4Ti3O12 by the heat treatment. Crystallized square micropatterns 1 µm in size consisted of small platelike crystals.

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