Surface Acoustic Wave Semiconductor Coupled Devices Employing Epitaxial Lift-Off Films.

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  • Hohkawa Kohji
    Department of Electronic & Electrical Engineering, Kanagawa Institute of Technology, 1030 Shimo–Ogino, Atsugi, Kanagawa 243–02, Japan
  • Suzuki Hiroji
    Advanced Technology Research Laboratory, Meidensha Corporation, 1–17, Ohsaki 2–chome, Shinagawa, Tokyo 141, Japan
  • Komine Kenji
    Advanced Technology Research Laboratory, Meidensha Corporation, 1–17, Ohsaki 2–chome, Shinagawa, Tokyo 141, Japan
  • Huang Qixin
    Department of Electronic & Electrical Engineering, Kanagawa Institute of Technology, 1030 Shimo–Ogino, Atsugi, Kanagawa 243–02, Japan

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タイトル別名
  • Surface Acoustic Wave Semiconductor Cou

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We present high-performance surface acoustic wave semiconductor coupled devices in which highly functional compound semiconductor devices and highly efficient surface acoustic wave devices are monolithically integrated on the same substrate using epitaxial lift-off films. We investigated the optimal conditions for lift-off and bonding processes and succeeded in fabricating a quasi-monolithic structure without any damage in semiconductor films. We also investigated basic integrated circuit fabrication processes such as patterning and etching of the quasi-monolithic substrate. The bonded film is stable and rugged enough against these processes and the substrate can be handled as a monolithic substrate. Based on our experimental results, we confirmed that fabricating high performance functional devices is feasible.

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